| PART |
Description |
Maker |
| BLS6G2933S-130 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2731P-200 |
LDMOS S-Band radar pallet amplifier
|
NXP Semiconductors N.V.
|
| BLA6H0912-500 |
LDMOS avionics radar power transistor
|
NXP Semiconductors
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
| AM83135-040 2772 |
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Red; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes 射频
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM2729-110 2713 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| AM83135-010 2710 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM83135-005 2897 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
